SFT1350-H
MOSFET P-CH 40V 19A TPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel MOSFET, SFT1350-H, is designed for high-efficiency power switching applications. This device features a 40V Drain-Source Voltage (Vdss) and supports a continuous drain current of 19A at 25°C. The low on-resistance of 59mOhm at 9.5A and 10V gate drive ensures minimal power loss. With a gate charge of 12 nC at 10V and input capacitance of 590 pF at 20V, it offers excellent switching characteristics. The component is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. Its robust thermal performance is demonstrated by a maximum power dissipation of 1W (Ta) and 23W (Tc), operating at junction temperatures up to 150°C. Typical applications include power management, automotive systems, and industrial electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 23W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | IPAK/TP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 20 V |
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