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SFT1345-TL-H

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SFT1345-TL-H

MOSFET P-CH 100V 11A TP-FA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi SFT1345-TL-H is a P-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 11A (Ta) at 25°C. With a low on-resistance of 275mOhm at 5.5A and 10V Vgs, it offers efficient power handling. The device supports gate drive voltages from 4V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is a maximum of 1020pF at 20V Vds, and gate charge (Qg) is 21nC at 10V Vgs. The SFT1345-TL-H dissipates a maximum of 1W (Ta) or 35W (Tc) and operates at junction temperatures up to 150°C. It is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, identified as TP-FA, and is delivered in Tape & Reel (TR) packaging. This MOSFET is commonly utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Rds On (Max) @ Id, Vgs275mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageTP-FA
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1020 pF @ 20 V

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