SFT1345-H
MOSFET P-CH 100V 11A TPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SFT1345-H is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 11 A at 25°C (Ta). With a maximum Rds On of 275 mOhm at 5.5 A and 10 V, it offers efficient power handling. The device supports a gate drive voltage range from 4 V to 10 V and has a maximum gate-source voltage of ±20 V. Key electrical characteristics include an input capacitance (Ciss) of 1020 pF at 20 V and a gate charge (Qg) of 21 nC at 10 V. The SFT1345-H is packaged in a TO-251-3 Short Leads, IPAK/TP form factor, suitable for through-hole mounting. It can dissipate up to 1 W (Ta) or 35 W (Tc) and operates at junction temperatures up to 150°C. This MOSFET is utilized in power management and switching circuits across various industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 275mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | IPAK/TP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 20 V |
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