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SFT1342-W

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SFT1342-W

MOSFET P-CH 60V 12A TP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi SFT1342-W is a P-Channel Power MOSFET designed for through-hole mounting in industrial and automotive applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 12A at 25°C (Ta). With a maximum power dissipation of 1W (Ta) and 15W (Tc), it offers robust performance. The Rds(On) is specified at a maximum of 62mOhm at 6A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 26 nC at 10V and an input capacitance (Ciss) of 1150 pF at 20V. The device supports a gate-source voltage range of ±20V and operates at junction temperatures up to 150°C. It is supplied in an IPAK/TP package, specifically TO-251-3 Short Leads, IPAK, or TO-251AA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs62mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageIPAK/TP
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 20 V

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