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SFT1342-TL-E

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SFT1342-TL-E

MOSFET P-CH 60V 12A DPAK/TP-FA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SFT1342-TL-E is a P-Channel MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Ta). Its low on-resistance, specified at a maximum of 62mOhm at 6A and 10V Vgs, ensures efficient power transfer. The device supports gate drive voltages from 4V to 10V, with a maximum gate-source voltage of ±20V. Key electrical characteristics include a gate charge (Qg) of 26 nC at 10V and input capacitance (Ciss) of 1150 pF at 20V. The SFT1342-TL-E is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount configuration, supplied on tape and reel. Power dissipation is rated at 1W (Ta) and 15W (Tc). This MOSFET is suitable for use in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs62mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device PackageDPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 20 V

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