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SFT1341-W

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SFT1341-W

MOSFET P-CH 40V 10A IPAK/TP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi SFT1341-W is a P-Channel Power MOSFET designed for efficient power management. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 10A at 25°C (Ta). The on-resistance (Rds On) is a maximum of 112mOhm at 5A and 4.5V gate-source voltage. With a gate charge (Qg) of 8 nC maximum at 4.5V and input capacitance (Ciss) of 650 pF maximum at 20V, this MOSFET is suitable for various switching applications. It offers a maximum power dissipation of 1W (Ta) and 15W (Tc) and operates up to 150°C (TJ). The IPAK/TP package, specifically TO-251-3 Short Leads, IPAK, TO-251AA, allows for through-hole mounting. This device finds application in consumer electronics, industrial automation, and automotive systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Rds On (Max) @ Id, Vgs112mOhm @ 5A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id-
Supplier Device PackageIPAK/TP
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 20 V

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