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SFT1341-TL-E

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SFT1341-TL-E

MOSFET P-CH 40V 10A DPAK/TP-FA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SFT1341-TL-E is a P-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 10A at 25°C (Ta). With a maximum On-Resistance (Rds On) of 112mOhm at 5A and 4.5V Vgs, it facilitates low conduction losses. The device operates with a gate drive range from 1.8V to 4.5V, and its Gate Charge (Qg) is 8 nC at 4.5V. Input capacitance (Ciss) is rated at a maximum of 650 pF at 20V. The SFT1341-TL-E offers a power dissipation capability of 1W (Ta) and 15W (Tc). It is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, suitable for surface mounting. This MOSFET is utilized in various industries, including automotive and industrial power management.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Rds On (Max) @ Id, Vgs112mOhm @ 5A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id1.4V @ 1mA
Supplier Device PackageDPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 20 V

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