SFT1341-E
MOSFET P-CH 40V 10A IPAK/TPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's SFT1341-E is a P-Channel Power MOSFET designed for efficient power switching. This device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 10A at 25°C (Ta). With a low on-resistance (Rds On) of 112mOhm maximum at 5A and 4.5V Vgs, it minimizes conduction losses. The device offers a gate charge (Qg) of 8 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 650 pF maximum at 20V Vds. It is available in an IPAK/TP package for through-hole mounting, with a maximum junction temperature of 150°C. Power dissipation is rated at 1W (Ta) and 15W (Tc). The SFT1341-E finds application in various power management circuits, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | IPAK/TP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 20 V |
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