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SFR9024TM

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SFR9024TM

MOSFET P-CH 60V 7.8A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SFR9024TM is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 7.8 A at 25°C (Tc). It offers a maximum On-Resistance (Rds On) of 280mOhm at 3.9A and 10V gate drive. The MOSFET is packaged in a TO-252AA (DPAK) surface-mount configuration, suitable for high-density board designs. With a maximum power dissipation of 32W at 25°C (Tc), it is engineered for efficient thermal management. Key electrical parameters include a Gate Charge (Qg) of 19 nC (Max) at 10V and an Input Capacitance (Ciss) of 600 pF (Max) at 25V. This component is typically utilized in power management, automotive, and industrial control systems. It operates within a junction temperature range of -55°C to 150°C and is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7.8A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 3.9A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V

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