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SFR9014TF

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SFR9014TF

MOSFET P-CH 60V 5.3A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SFR9014TF is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 5.3A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 500mOhm at 2.7A and 10V, it offers efficient power switching. The device supports a gate drive voltage up to 10V for optimal performance. Its TO-252AA (DPAK) surface-mount package facilitates integration into compact designs, with a power dissipation capability of 24W (Tc). Operating across a temperature range of -55°C to 150°C, the SFR9014TF is suitable for use in industrial and automotive sectors. Key electrical parameters include a gate charge (Qg) of 11 nC and input capacitance (Ciss) of 350 pF.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.3A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 2.7A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V

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