SFP9Z24
MOSFET P-CH 60V 9.7A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SFP9Z24 is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 9.7A at 25°C, with a maximum Power Dissipation of 49W. The Rds On is rated at a maximum of 280mOhm at 4.9A and 10V gate drive. The TO-220-3 package offers through-hole mounting for robust circuit integration. Key parameters include a Gate Charge (Qg) of 19nC and Input Capacitance (Ciss) of 600pF, both specified at 10V and 25V respectively. The operating temperature range is -55°C to 175°C. This MOSFET is suitable for use in various industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 49W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
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