SFP9630
MOSFET P-CH 200V 6.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SFP9630 is a P-Channel Power MOSFET designed for demanding applications. Featuring a Drain to Source Voltage (Vdss) of 200 V and a continuous Drain current (Id) of 6.5 A at 25°C (Tc), this component offers a maximum power dissipation of 70 W (Tc). The Rds On is specified at 800 mOhm maximum at 3.3 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 36 nC maximum at 10 V and input capacitance (Ciss) of 965 pF maximum at 25 V. The device is housed in a TO-220-3 through-hole package, facilitating straightforward integration into circuit designs. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for use in power switching and motor control applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 965 pF @ 25 V |
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