SFH9250L
MOSFET P-CH 200V 19.5A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel MOSFET SFH9250L offers robust performance with a 200V drain-source voltage and a continuous drain current of 19.5A at 25°C. This device features a low on-resistance of 230mOhm at 9.8A and 5V gate-source voltage, coupled with a maximum power dissipation of 204W. The SFH9250L is housed in a TO-3P package, designed for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C. Key parameters include a gate charge of 120 nC and input capacitance of 3250 pF. This MOSFET is suitable for applications in power management and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 9.8A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 204W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
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