SFF9250L
MOSFET P-CH 200V 12.6A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel MOSFET, part number SFF9250L, is a high-performance power semiconductor designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 12.6 A at 25°C, with a maximum power dissipation of 90 W. The Rds On is specified at 230 mOhm maximum at 6.3 A and 5 V. It utilizes a TO-3PF through-hole package for robust mounting. Key parameters include a gate charge (Qg) of 120 nC at 5 V and input capacitance (Ciss) of 3250 pF at 25 V. The operating temperature range is from -55°C to 150°C. This device is commonly employed in industrial power supplies, automotive systems, and motor control applications where reliable switching performance is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 6.3A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
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