SCH2830-TL-E
MOSFET P-CH 20V 1A 6SCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi SCH2830-TL-E is a P-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 1A at 25°C, this device offers a low on-resistance (Rds On) of 500mOhm at 500mA, 4V. The MOSFET incorporates an isolated Schottky diode, enhancing its switching performance. With a maximum power dissipation of 600mW (Ta) and an operating junction temperature of 150°C, it is suitable for power management circuits in industrial automation, consumer electronics, and automotive systems. The device is supplied in a 6-SCH surface mount package with flat leads, facilitating efficient board assembly. Key parameters include a gate charge (Qg) of 1.5 nC at 4V and input capacitance (Ciss) of 115 pF at 10V.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 4V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-SCH |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 10 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
