SCH2825-TL-E
MOSFET N-CH 30V 1.6A 6SCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel MOSFET, SCH2825-TL-E, features a 30 V drain-source voltage and 1.6 A continuous drain current. This device offers a low on-resistance of 180 mOhm maximum at 800 mA and 10 V Vgs, with a 4V/10V drive voltage range. The N-Channel MOSFET utilizes MOSFET technology and is packaged in a 6-SCH (6-SMD, Flat Leads) surface mount configuration, supplied on tape and reel. Key parameters include a 2 nC gate charge and 88 pF input capacitance at 10 V. The component is designed with an isolated Schottky diode and operates within a temperature range of -55°C to 125°C. This power MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 125°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 800mA, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-SCH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 88 pF @ 10 V |
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