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SCH1434-TL-H

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SCH1434-TL-H

MOSFET N-CH 30V 2A 6SCH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi SCH1434-TL-H is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 2 A at 25°C. With a maximum on-resistance (Rds On) of 165 mOhm at 1 A and 4.5 V gate-source voltage, it offers efficient power handling. The device operates with gate drive voltages from 1.8 V to 4.5 V and exhibits a low gate charge (Qg) of 1.7 nC at 4.5 V. Input capacitance (Ciss) is rated at a maximum of 130 pF @ 10 V. The SCH1434-TL-H is housed in a compact 6-SCH (SOT-563/SOT-666) surface mount package and supports an operating junction temperature up to 150°C. Power dissipation is 800 mW. This MOSFET is utilized across various industries including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs165mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package6-SCH
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds130 pF @ 10 V

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