SCH1430-TL-H
MOSFET N-CH 20V 2A 6SCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SCH1430-TL-H is a 20V N-Channel MOSFET designed for efficient switching applications. This component offers a continuous drain current of 2A (Ta) and a maximum power dissipation of 800mW (Ta). Key electrical specifications include a Drain-to-Source Voltage (Vdss) of 20V and a low on-resistance (Rds On) of 125mOhm at 1A, 4.5V. The gate charge (Qg) is specified at a maximum of 1.8 nC at 4.5V, and input capacitance (Ciss) is a maximum of 128 pF at 10V. It supports drive voltages from 1.8V to 4.5V and has a maximum gate-source voltage (Vgs) of ±12V. The SCH1430-TL-H is housed in a compact SOT-563, SOT-666 package, specifically the 6-SCH variant, suitable for surface mount assembly. It operates within a temperature range of -55°C to 150°C (TJ). This MOSFET finds application in various industrial sectors including consumer electronics and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-SCH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 128 pF @ 10 V |
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