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SCH1345-TL-H

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SCH1345-TL-H

MOSFET P-CH 20V 4.5A SOT563/SCH6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi SCH1345-TL-H is a P-Channel MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 4.5 A at 25°C. With a low on-resistance (Rds On) of 49 mOhm at 2 A and 4.5 Vgs, it offers efficient power handling. The MOSFET supports a wide gate drive voltage range from 1.5 V to 4.5 V. Key parameters include a maximum gate charge (Qg) of 11 nC at 4.5 V and an input capacitance (Ciss) of 1220 pF at 10 V. It is housed in a compact SOT-563/SCH6 surface mount package, suitable for space-constrained designs. The maximum power dissipation is 1W (Ta), and it operates within a temperature range of 150°C (TJ). This component is commonly found in power management circuits, battery charging solutions, and portable electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Rds On (Max) @ Id, Vgs49mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.3V @ 1mA
Supplier Device PackageSOT-563/SCH6
Grade-
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1220 pF @ 10 V
Qualification-

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