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SCH1343-TL-H

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SCH1343-TL-H

MOSFET P-CH 20V 3.5A 6SCH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SCH1343-TL-H is a P-Channel MOSFET designed for high-efficiency switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) capability of 3.5A at 25°C, this component offers robust performance. The Rds(On) is specified at a maximum of 72mOhm at 2A, 4.5V, with a gate drive voltage range from 1.8V to 4.5V. Its Gate Charge (Qg) is 11 nC maximum at 4.5V, and Input Capacitance (Ciss) is 1220 pF maximum at 10V. The device is housed in a compact 6-SCH package (SOT-563, SOT-666) suitable for surface mounting and operates within an ambient temperature range up to 150°C. Power dissipation is rated at 1W (Ta). This MOSFET is commonly utilized in power management, battery protection, and general-purpose switching circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs72mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package6-SCH
Grade-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1220 pF @ 10 V
Qualification-

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