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SCH1337-TL-W

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SCH1337-TL-W

MOSFET P-CH 30V 2A SOT563/SCH6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SCH1337-TL-W is a P-Channel MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2A at 25°C. The device offers a maximum on-resistance (Rds On) of 150mOhm at 1A and 10V gate-source voltage. With a maximum power dissipation of 800mW, it operates across a temperature range up to 150°C. Key parameters include a gate charge (Qg) of 3.9 nC at 10V and input capacitance (Ciss) of 172 pF at 10V. The SCH1337-TL-W is supplied in a SOT-563/SCH6 package and is available on tape and reel. Its specifications make it suitable for applications in power management and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs150mOhm @ 1A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device PackageSOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds172 pF @ 10 V

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