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SCH1337-TL-H

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SCH1337-TL-H

MOSFET P-CH 30V 2A 6SCH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SCH1337-TL-H is a P-Channel MOSFET designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 2A at 25°C. With a maximum power dissipation of 800mW at 25°C, it offers a low on-resistance of 150mOhm at 1A and 10V. The device supports gate drive voltages ranging from 4V to 10V and has a typical gate charge of 3.9nC at 10V, with an input capacitance (Ciss) of 172pF at 10V Vds. Operating at junction temperatures up to 150°C, it is housed in a compact 6-SCH package, commonly found in SOT-563 or SOT-666 footprints, suitable for surface mount installations. This MOSFET is utilized in various industries including automotive and consumer electronics. The part is supplied on tape and reel.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs150mOhm @ 1A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package6-SCH
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds172 pF @ 10 V

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