SCH1335-TL-H
MOSFET P-CH 12V 2.5A 6SCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SCH1335-TL-H is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 12 V and a continuous drain current (Id) of 2.5 A at 25°C, with a maximum power dissipation of 800 mW. Optimized for efficient switching, it offers a low on-resistance of 112 mOhm at 1 A and 4.5 V. The gate charge (Qg) is specified at 3.1 nC maximum at 4.5 V, and input capacitance (Ciss) is 270 pF maximum at 6 V. Operating at temperatures up to 150°C (TJ), this MOSFET is housed in a compact 6-SCH package, suitable for surface mount configurations. Its capabilities make it suitable for use in consumer electronics, industrial control, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-SCH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 6 V |
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