SCH1334-TL-H
MOSFET P-CH 12V 1.6A 6SCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi SCH1334-TL-H is a P-Channel MOSFET designed for power management applications. This component features a Drain-Source Voltage (Vdss) of 12 V and a continuous Drain Current (Id) of 1.6 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 215 mOhm at 800 mA and 4.5 V Vgs. It is supplied in a 6-SCH (SOT-563/SOT-666) surface mount package, optimized for high-density board layouts. Key parameters include a Gate Charge (Qg) of 1.6 nC at 4.5 V and an input capacitance (Ciss) of 120 pF at 6 V Vds. The maximum power dissipation (Pd) is 800 mW at 25°C (Ta). This MOSFET is suitable for use in consumer electronics and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 215mOhm @ 800mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | 6-SCH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 6 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
FDP4D5N10C
MOSFET N-CH 100V 128A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
