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SCH1332-TL-W

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SCH1332-TL-W

MOSFET P-CH 20V 2.5A SOT563/SCH6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SCH1332-TL-W is a P-Channel MOSFET designed for high-density applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.5A at 25°C. It offers a low on-resistance (Rds On) of 95mOhm maximum at 1.5A and 4.5V gate-source voltage. The device supports drive voltages from 1.8V to 4.5V and has a maximum gate charge (Qg) of 4.6 nC at 4.5V. Its input capacitance (Ciss) is rated at a maximum of 375 pF at 10V. Packaged in a SOT-563/SCH6, this surface mount component operates efficiently up to a junction temperature of 150°C, with a maximum power dissipation of 1W (Ta). The SCH1332-TL-W is commonly utilized in power management solutions across various industries, including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Rds On (Max) @ Id, Vgs95mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.3V @ 1mA
Supplier Device PackageSOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds375 pF @ 10 V

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