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SCH1332-TL-H

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SCH1332-TL-H

MOSFET P-CH 20V 2.5A 6SCH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SCH1332-TL-H is a P-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2.5A (Ta) at 25°C. With a low Rds(On) of 95mOhm at 1.5A and 4.5V Vgs, it offers efficient power handling. The device operates with a gate drive voltage range of 1.8V to 4.5V and has a maximum gate-source voltage (Vgs) of ±10V. Key parameters include a gate charge (Qg) of 4.6 nC (max) at 4.5V and an input capacitance (Ciss) of 375 pF (max) at 10V Vds. The SCH1332-TL-H is packaged in a 6-SCH (SOT-563, SOT-666) format, suitable for surface mounting, and supports a maximum power dissipation of 1W (Ta). It is rated for operation up to 150°C (TJ). This MOSFET is commonly found in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Rds On (Max) @ Id, Vgs95mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.3V @ 1mA
Supplier Device Package6-SCH
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds375 pF @ 10 V

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