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SCH1330-TL-W

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SCH1330-TL-W

MOSFET P-CH 20V 1.5A SOT563/SCH6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The SCH1330-TL-W from onsemi is a P-Channel MOSFET designed for demanding applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 1.5A at 25°C. With a maximum power dissipation of 1W (Ta), it is suitable for power management in various electronic systems. The Rds On is specified at 241mOhm maximum at 750mA and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 1.7 nC at 4.5V and input capacitance (Ciss) of 120pF maximum at 10V. Operating at temperatures up to 150°C (TJ), this device is housed in a compact SOT-563/SCH6 package, making it ideal for space-constrained designs. The SCH1330-TL-W finds application in areas such as portable electronics, battery management, and general-purpose switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs241mOhm @ 750mA, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.4V @ 1mA
Supplier Device PackageSOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 10 V

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