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SCH1330-TL-H

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SCH1330-TL-H

MOSFET P-CH 20V 1.5A 6SCH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi SCH1330-TL-H is a P-Channel MOSFET designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) capability of 1.5 A at 25°C. The Rds On is specified at a maximum of 241 mOhm when conducting 750 mA with a 4.5 V Gate-to-Source voltage. Key parameters include a typical Gate Charge (Qg) of 1.7 nC at 4.5 V and an Input Capacitance (Ciss) of 120 pF at 10 V. The device operates within an ambient temperature range and has a maximum junction temperature of 150°C, with a power dissipation of 1 W. It is supplied in a compact 6-SCH package suitable for surface mounting and is available on tape and reel. This MOSFET is utilized in various industries, including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs241mOhm @ 750mA, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.4V @ 1mA
Supplier Device Package6-SCH
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 10 V

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