SCH1302-TL-E
MOSFET P-CH 20V 2A 6SCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SCH1302-TL-E is a P-Channel MOSFET designed for efficient power management. This device offers a Drain-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 2 A at 25°C. Featuring a low on-resistance of 165 mOhm maximum at 1 A and 4 V, it minimizes conduction losses. The MOSFET is housed in a compact 6-SMD, Flat Leads (6-SCH) package, suitable for surface mount applications and operating at junction temperatures up to 150°C. Key electrical characteristics include a gate charge (Qg) of 10 nC maximum at 10 V and an input capacitance (Ciss) of 410 pF maximum at 10 V. The power dissipation is rated at 800 mW (Ta). This component finds application in various electronic systems, including power supplies, battery management, and general-purpose switching.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 1A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-SCH |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 10 V |
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