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SBSS84LT1G

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SBSS84LT1G

MOSFET P-CH 50V 130MA SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SBSS84LT1G is a P-Channel, 50V MOSFET designed for surface mount applications. This component, housed in a SOT-23-3 (TO-236) package, offers a continuous drain current of 130mA at 25°C and a maximum power dissipation of 225mW. Key electrical characteristics include a drain-to-source voltage (Vdss) of 50V, a maximum on-resistance (Rds On) of 10 Ohms at 100mA and 5V, and a gate-source threshold voltage (Vgs(th)) of 2V at 250µA. The device features a gate charge (Qg) of 2.2 nC at 10V and an input capacitance (Ciss) of 36 pF at 5V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for various applications including power management and general switching in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C130mA (Ta)
Rds On (Max) @ Id, Vgs10Ohm @ 100mA, 5V
FET Feature-
Power Dissipation (Max)225mW (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds36 pF @ 5 V

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