RFP50N05L
MOSFET N-CH 50V 50A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi RFP50N05L is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a 50V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C, this component offers a low on-resistance (Rds On) of 22mOhm at 50A and 5V gate-source voltage. The device supports a gate drive voltage range from 4V to 5V, with a maximum gate charge (Qg) of 140 nC at 10V. With a maximum power dissipation of 110W (Tc), it is suitable for power switching and motor control applications in industries such as automotive and industrial automation. The RFP50N05L is housed in a standard TO-220-3 through-hole package, facilitating easy integration into existing designs. It operates across a wide temperature range from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 50A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
