RFP4N100
MOSFET N-CH 1000V 4.3A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi RFP4N100 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous Drain current (Id) of 4.3 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 3.5 Ohms when measured at 2.5 A drain current and 10 V gate-to-source voltage. With a typical gate charge (Qg) of 120 nC at 20 V, this MOSFET offers efficient switching characteristics. The threshold voltage (Vgs(th)) is a maximum of 4 V at 250 µA. Packaged in a standard TO-220-3 through-hole configuration, the RFP4N100 is suitable for power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V |
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