RFP45N06
MOSFET N-CH 60V 45A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi RFP45N06 is an N-Channel Power MOSFET designed for high-current switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 45A at 25°C, with a maximum power dissipation of 131W (Tc). The Rds(On) is specified at a maximum of 28mOhm at 45A and a gate-source voltage (Vgs) of 10V, making it suitable for efficient power conversion. Key parameters include a gate charge (Qg) of 150 nC (max) at 20V Vgs and input capacitance (Ciss) of 2050 pF (max) at 25V Vds. The RFP45N06 is supplied in a TO-220-3 through-hole package, operating across a temperature range of -55°C to 175°C (TJ). This component finds application in industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 131W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 25 V |
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