RFP40N10
MOSFET N-CH 100V 40A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi RFP40N10 is an N-Channel Power MOSFET designed for high-performance applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 40A at 25°C (Tc). With a maximum power dissipation of 160W (Tc), it is suitable for demanding power management tasks. The device exhibits a low on-resistance (Rds On) of 40mOhm at 40A and 10V gate drive, minimizing conduction losses. Its Gate Charge (Qg) is 300 nC at 20V. Operating within a junction temperature range of -55°C to 175°C, the RFP40N10 is housed in a standard TO-220-3 package. This component is widely utilized in power supplies, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 20 V |
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