RFP30P06
MOSFET P-CH 60V 30A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi RFP30P06 is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current capability of 30A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 65mOhm at 30A and 10V Vgs. Its input capacitance (Ciss) is rated at a maximum of 3200 pF at 25V, and the gate charge (Qg) is 170 nC at 20V. The threshold voltage (Vgs(th)) is a maximum of 4V at 250µA. Packaged in a TO-220-3 through-hole configuration, the RFP30P06 is suitable for power switching and motor control applications in various industries including industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 30A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V |
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