RFP30P05
MOSFET P-CH 50V 30A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi RFP30P05 is a P-Channel Power MOSFET designed for demanding power switching applications. This device offers a drain-source voltage (Vdss) of 50V and a continuous drain current (Id) capability of 30A at 25°C (Tc). Key electrical parameters include a maximum on-resistance (Rds On) of 65mOhm at 30A and 10V, and a gate charge (Qg) of 170 nC at 20V. Input capacitance (Ciss) is specified at 3200 pF maximum at 25V. The device features a threshold voltage (Vgs(th)) of 4V maximum at 250µA. Housed in a standard TO-220-3 through-hole package, this MOSFET is suitable for use in industrial, automotive, and high-power conversion systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 30A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V |
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