RFP3055LE
MOSFET N-CH 60V 11A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi RFP3055LE is a 60V N-Channel Power MOSFET designed for efficient switching applications. This device features a low ON-resistance of 107mOhm maximum at 8A and 5V gate drive, with continuous drain current capability of 11A at 25°C. The TO-220-3 package offers a thermal resistance suitable for power dissipation up to 38W at 25°C. Key parameters include a Vgs(th) of 3V maximum at 0.25mA, a gate charge of 11.3nC typical at 10V, and input capacitance (Ciss) of 350pF maximum at 25V. Operating temperature range is -55°C to 175°C. This MOSFET is suitable for use in power supply units, motor control, and general-purpose switching within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 107mOhm @ 8A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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