RFP3055
MOSFET N-CH 60V 12A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi RFP3055 is an N-channel power MOSFET designed for demanding applications. This TO-220-3 packaged device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 12A at 25°C. Its low Rds(on) of 150mOhm at 12A and 10V gate drive voltage, coupled with a maximum power dissipation of 53W (Tc), makes it suitable for power switching and amplification circuits. Key electrical parameters include a gate charge (Qg) of 23 nC and input capacitance (Ciss) of 300 pF. The device operates across a wide temperature range of -55°C to 175°C (TJ). Applications include power supplies, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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