RFP2N10L
MOSFET N-CH 100V 2A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi RFP2N10L is an N-Channel Power MOSFET designed for efficient switching applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 2A at 25°C, with a maximum power dissipation of 25W (Tc). The on-resistance (Rds On) is specified at 1.05 Ohms maximum at 2A and 5V gate-source voltage. The RFP2N10L utilizes a TO-220-3 through-hole package, offering robust thermal performance and ease of mounting. Key electrical characteristics include an input capacitance (Ciss) of 200 pF at 25V, a gate-source voltage (Vgs) range of ±10V, and a threshold voltage (Vgs(th)) of 2V maximum at 250µA. This component is suitable for use in power supplies, motor control, and general-purpose switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 2A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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