RFP14N05
MOSFET N-CH 50V 14A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi RFP14N05 is an N-Channel Power MOSFET designed for demanding applications. This device features a 50V drain-source breakdown voltage and can handle a continuous drain current of 14A at 25°C (Tc). The RFP14N05 exhibits a low on-resistance of 100mOhm maximum at 14A and 10V gate-source voltage, facilitating efficient power switching. Key electrical characteristics include a typical input capacitance (Ciss) of 570 pF at 25V and a gate charge (Qg) of 40 nC at 20V. The threshold voltage (Vgs(th)) is a maximum of 4V at 250µA. This component is housed in a standard TO-220-3 package, suitable for through-hole mounting. The RFP14N05 finds application in power supplies, motor control, and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
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