RFG60P05E
MOSFET P-CH 50V 60A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi RFG60P05E is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 60A at 25°C. With a maximum power dissipation of 215W (Tc), it is suitable for high-power switching and control. The on-resistance (Rds On) is specified at a maximum of 30mOhm at 60A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 450 nC at 20V and an input capacitance (Ciss) of 7200 pF at 25V. The MOSFET operates within a temperature range of -55°C to 175°C (TJ). Packaged in a TO-247-3 through-hole configuration, this component is commonly utilized in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 450 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
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