RFD8P05
MOSFET P-CH 50V 8A I-PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi RFD8P05 is a P-Channel 50V power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current of 8A (Tc) and a maximum power dissipation of 48W (Tc). The drain-to-source breakdown voltage is 50V, with a maximum Rds(on) of 300mOhm at 8A and 10V gate drive. Gate charge is specified at a maximum of 80 nC at 20V. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-251-3 Short Leads, IPAK (TO-251AA) for through-hole mounting, the RFD8P05 is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 20 V |
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