RFD3055SM9A
MOSFET N-CH 60V 12A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi RFD3055SM9A is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 12A at 25°C. The device offers a low on-resistance of 150mOhm maximum at 12A and 10V Vgs. It is packaged in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Key electrical characteristics include a 23 nC maximum gate charge and 300 pF maximum input capacitance. With a maximum power dissipation of 53W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is well-suited for power management solutions in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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