RFD3055LESM
MOSFET N-CH 60V 11A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi RFD3055LESM is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C. The device offers a low on-resistance (Rds On) of 107mOhm maximum at 8A, 5V, and a gate charge (Qg) of 11.3 nC maximum at 10V, facilitating efficient switching. With a maximum power dissipation of 38W (Tc), it is suitable for power management in automotive and industrial sectors. The TO-252AA package enables surface mounting, and its operating temperature range of -55°C to 175°C (TJ) ensures reliability in harsh environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 107mOhm @ 8A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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