RFD3055LE
MOSFET N-CH 60V 11A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi RFD3055LE is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 11A at 25°C (Tc), with a maximum power dissipation of 38W (Tc). Featuring a low on-resistance (Rds On) of 107mOhm at 8A and 5V gate drive, it minimizes conduction losses. The device has a typical gate charge (Qg) of 11.3 nC at 10V and input capacitance (Ciss) of 350pF at 25V. Packaged in a TO-251-3 Short Leads, IPAK (TO-251AA) for through-hole mounting, it operates across a wide temperature range of -55°C to 175°C (TJ). Its robust characteristics make it suitable for use in power supplies, motor control, and various industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 107mOhm @ 8A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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