RFD16N05SM
MOSFET N-CH 50V 16A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi RFD16N05SM is a 50V N-Channel Power MOSFET designed for efficient power switching applications. This component offers a continuous drain current of 16A at 25°C and a low on-resistance of 47mOhm at 16A and 10V gate drive. Key parameters include a Vgs(th) of 4V and a gate charge of 80 nC at 20V. The device features a DPAK (TO-252AA) surface mount package, enabling high-density board designs. With a maximum power dissipation of 72W and an operating temperature range of -55°C to 175°C, the RFD16N05SM is suitable for use in industrial power supplies, automotive electronics, and consumer power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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