RFD15P05SM
MOSFET P-CH 50V 15A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi RFD15P05SM is a P-Channel Power MOSFET designed for efficient switching applications. This component features a 50V drain-source voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C. Its low on-resistance (Rds On) of 150mOhm is achieved at 15A and a 10V gate-source voltage (Vgs). The device is packaged in a TO-252AA (DPAK) surface-mount package, enabling robust thermal performance with a maximum power dissipation of 80W. Key electrical characteristics include a gate charge (Qg) of 150nC and input capacitance (Ciss) of 1150pF. Operating across a temperature range of -55°C to 175°C, the RFD15P05SM is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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