RFD15P05
MOSFET P-CH 50V 15A I-PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi RFD15P05 is a P-Channel Power MOSFET designed for demanding applications. This device features a 50V drain-to-source breakdown voltage and can handle a continuous drain current of 15A at 25°C (Tc), with a maximum power dissipation of 80W (Tc). The Rds(on) is specified at a maximum of 150mOhm at 15A and 10V Vgs. Key parameters include a gate charge of 150 nC (max) at 20V and input capacitance (Ciss) of 1150 pF (max) at 25V. The RFD15P05 is housed in a TO-251-3 Short Leads, IPAK package, facilitating through-hole mounting. It operates across a wide temperature range from -55°C to 175°C (TJ). This component is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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