RFD12N06RLE
MOSFET N-CH 60V 18A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi UltraFET RFD12N06RLE is an N-Channel Power MOSFET with a drain-source voltage of 60 V. This through-hole component features a continuous drain current of 18 A (Tc) and a maximum power dissipation of 40 W (Tc). The Rds On is specified at a maximum of 63 mOhm at 18 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 15 nC @ 10 V and input capacitance (Ciss) of 485 pF @ 25 V. The device operates across a temperature range of -55°C to 175°C (TJ). The IPAK package (TO-251-3 Short Leads) is supplied in tubes. This MOSFET is suitable for applications in power management and industrial automation.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 25 V |
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