RFD10P03LSM
MOSFET P-CH 30V 10A TO252-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi RFD10P03LSM is a P-Channel MOSFET designed for efficient power switching applications. Featuring a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 10A at 25°C (Tc), this device offers robust performance. Its low on-resistance (Rds On) of 200mOhm at 10A and 5V gate-source voltage (Vgs) minimizes conduction losses. The MOSFET exhibits a gate charge (Qg) of 30nC maximum at 10V and an input capacitance (Ciss) of 1035pF maximum at 25V. Packaged in a TO-252AA (DPAK) surface-mount configuration, it is suitable for automated assembly. Key parameters include a threshold voltage (Vgs(th)) of 2V maximum at 250µA. This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 10A, 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1035 pF @ 25 V |
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